sup/sub65p06-20 vishay siliconix document number: 70289 s-05111?rev. c, 10-dec-01 www.vishay.com 2-1 p-channel 60-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) ?60 0.020 ?65 a sup65p06-20 sub65p06-20 drain connected to tab s g d p-channel mosfet to-220ab top view gds to-263 s g top view d
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current t c = 25 c ?65 a continuous drain current (t j = 175 c) t c = 125 c i d ?39 pulsed drain current i dm ?200 a avalanche current i ar ?60 repetitive avalanche energy b l = 0.1 mh e ar 180 mj t c = 25 c (to-220ab and to-263) 250 d power dissipation t a = 125 c (to-263) c p d 3.7 w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol limit unit pcb mount (to-263) c r thja 40 junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.6 notes: a. package limited. b. duty cycle 1%. c. when mounted on 1? square pcb (fr-4 material). d. see soa curve for voltage derating. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
sup/sub65p06-20 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70289 s-05111 ? rev. c, 10-dec-01 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 60 gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 2.0 ? 3.0 ? 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = ? 60 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 60 v, v gs = 0 v, t j = 125 c ? 50 dss v ds = ? 60 v, v gs = 0 v, t j = 175 c ? 150 ? 5 v, v gs = ? 10 v ? 120 a v gs = ? 10 v, i d = ? 30 a 0.017 0.020 drain-source on-state resistance a r ds(on) v gs = ? 10 v, i d = ? 30 a, t j = 125 c 0.033 ds(on) v gs = ? 10 v, i d = ? 30 a, t j = 175 c 0.042 forward transconductance a g fs v ds = ? 15 v, i d = ? 30 a 25 s dynamic b input capacitance c iss 4500 output capacitance c oss v gs = 0 v, v ds = ? 25 v, f = 1 mhz 870 pf reversen transfer capacitance c rss 350 total gate charge c q g 85 120 gate-source charge c q gs v ds = ? 30 v, v gs = ? 10 v, i d = ? 65 a 24 nc gate-drain charge c q gd ds gs d 22 turn-on delay time c t d(on) 15 40 rise time c t r v dd = ? 30 v, r l = 0.47 40 80 turn-off delay time c t d(off) v dd = ? 30 v, r l = 0.47 ? 65 a, v gen = ? 10 v, r g = 2.5 65 120 ns fall time c t f d gen g 30 60 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s ? 65 pulsed current i sm ? 200 a forward voltage a v sd i f = ? 65 a, v gs = 0 v ? 1.1 ? 1.4 v reverse recovery time t rr 70 120 ns peak reverse recovery current i rm(rec) i f = ? 65 a, di/dt = 100 a/ s 7 9 a reverse recovery charge q rr f c notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing d. independent of operating temperature.
sup/sub65p06-20 vishay siliconix document number: 70289 s-05111 ? rev. c, 10-dec-01 www.vishay.com 2-3 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 1000 2000 3000 4000 5000 6000 0 102030405060 0 20 40 60 80 100 0 20406080100 0 40 80 120 160 200 0246810 0 40 80 120 160 200 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c 125 c 6 v t c = ? 55 c v ds = 30 v i d = 65 a v gs = 10, 9, 8 v 7 v v gs = 10 v v gs = 20 v c iss c oss c rss t c = ? 55 c 25 c 125 c 5 v 4 v
sup/sub65p06-20 vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70289 s-05111 ? rev. c, 10-dec-01 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0.3
0 20 40 60 80 0 25 50 75 100 125 150 175 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 safe operating area maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) v ds ? drain-to-source voltage (v) ? drain current (a) i d ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 100 500 10 0.1 10 s 100 s 1 ms 10 ms 100 ms dc t c = 25 c single pulse limited by r ds(on) 0.1 1 10 100 1
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